Service

Back to service catalogue
Photonic integrated circuits Prototyping

UV-VIS-NIR Luminescence Measurements of Semiconductor Materials and Devices

Photonic Integrated Circuits

Reference
4.4.9
Lead partner
VU

Technical Scope and Capabilities

This service measures

  • band-edge photoluminescence
  • stimulated emission
  • defect-related emission of semiconductor materials and devices.

Core Infrastructure / Tools / Equipment

The service uses

  • PHAROS femtosecond KGW:Yb laser, 10 W, 10 kHz, 200 fs, 1030 nm
  • Orpheus optical parametric amplifier, 210–2500 nm
  • Andor Kymera 328i spectrometer
  • Hamamatsu UV-VIS BT-CCD
  • Andor Kymera 193i spectrometer
  • Hamamatsu NIR CCD
  • photoluminescence setup
  • excitation range 210–2500 nm
  • detection range 300–2500 nm
  • sample temperature 10–800 K
  • sample size from 1 × 1 mm to 100 × 100 mm
  • maximum sample size of 25 × 25 mm for temperature measurements
  • laser power and energy meters
  • UV-VIS beam profiler
  • ultrasonic bath for sample cleaning and preparation.

Service Delivery Terms and Times

The service is provided by responsible laboratory staff. Clients cannot perform measurements independently.

Emission Decay Kinetics Measurements