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Photonic integrated circuits
Prototyping
UV-VIS-NIR Luminescence Measurements of Semiconductor Materials and Devices
Photonic Integrated Circuits
Technical Scope and Capabilities
This service measures
- band-edge photoluminescence
- stimulated emission
- defect-related emission of semiconductor materials and devices.
Core Infrastructure / Tools / Equipment
The service uses
- PHAROS femtosecond KGW:Yb laser, 10 W, 10 kHz, 200 fs, 1030 nm
- Orpheus optical parametric amplifier, 210–2500 nm
- Andor Kymera 328i spectrometer
- Hamamatsu UV-VIS BT-CCD
- Andor Kymera 193i spectrometer
- Hamamatsu NIR CCD
- photoluminescence setup
- excitation range 210–2500 nm
- detection range 300–2500 nm
- sample temperature 10–800 K
- sample size from 1 × 1 mm to 100 × 100 mm
- maximum sample size of 25 × 25 mm for temperature measurements
- laser power and energy meters
- UV-VIS beam profiler
- ultrasonic bath for sample cleaning and preparation.
Service Delivery Terms and Times
The service is provided by responsible laboratory staff. Clients cannot perform measurements independently.
