Back to service catalogue
Galios elektronika
Testing
Electrical Characterisation of Semiconductor Structures and Devices
Power Electronics
Technical Scope and Capabilities
This service provides I-V and C-V measurements of semiconductor structures and devices over the temperature range from -40 °C to 300 °C.
The service supports
- on-wafer measurements of samples up to 200 mm in diameter
- measurements of discrete devices.
Core Infrastructure / Tools / Equipment
The service uses
- Summit 11000 probe station with triax wafer chuck, Ubr at least 500 V, IL not more than 1 fA and Cres not more than 0.4 pF
- Keysight B2912B SMU with 10 fA, 210 V, 3 A DC and 10.5 A pulse
- Keysight E4980A LRC meter with frequency range 20 Hz to 2 MHz, Uac 0 to 2.0 Vrms and UDC 0 to 40 V
- N1260A high-voltage external bias tee with UDC not more than 3 kV and frequency range 10 kHz to 1 MHz.
Service Delivery Terms and Times
Details regarding terms, limitations and related matters are discussed separately with interested parties.
