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Power electronics Testing

Electrical Characterisation of Semiconductor Structures and Devices

Power Electronics

Reference
4.2.1
Lead partner
VU

Technical Scope and Capabilities

This service provides I-V and C-V measurements of semiconductor structures and devices over the temperature range from -40 °C to 300 °C.

The service supports

  • on-wafer measurements of samples up to 200 mm in diameter
  • measurements of discrete devices.

Core Infrastructure / Tools / Equipment

The service uses

  • Summit 11000 probe station with triax wafer chuck, Ubr at least 500 V, IL not more than 1 fA and Cres not more than 0.4 pF
  • Keysight B2912B SMU with 10 fA, 210 V, 3 A DC and 10.5 A pulse
  • Keysight E4980A LRC meter with frequency range 20 Hz to 2 MHz, Uac 0 to 2.0 Vrms and UDC 0 to 40 V
  • N1260A high-voltage external bias tee with UDC not more than 3 kV and frequency range 10 kHz to 1 MHz.

Service Delivery Terms and Times

Details regarding terms, limitations and related matters are discussed separately with interested parties.

Carrier Drift Current Transient Profiling