Technical Scope and Capabilities

This service provides contactless, non-destructive characterisation of carrier diffusion, mobility, recombination and refractive-index dynamics in semiconductor materials. It is suitable for investigation of charge transport processes in semiconductor materials and devices.

Light-induced transient grating measures diffraction of a probe beam from a transient interference pattern created by ultrafast excitation, revealing excited-state populations, carrier transport and refractive-index changes.

Core Infrastructure / Tools / Equipment

The service uses

• PHAROS femtosecond KGW:Yb laser, 6 W, 30 kHz, 250 fs, 1030 nm
• Orpheus optical parametric amplifier, 340–950 nm
• light-induced transient grating setup
• excitation range 340–950 nm
• probe wavelength 1030 nm
• temporal resolution 350 fs
• probe delay up to 8 ns
• sample temperature 78–800 K
• sample size from 1 × 1 mm to 100 × 100 mm
• maximum sample size of 25 × 25 mm for temperature measurements
• laser power and energy meters
• UV-VIS beam profiler
• ultrasonic bath for sample cleaning and preparation.

Service Delivery Terms and Times

The service is provided by responsible laboratory staff. Clients cannot perform measurements independently.

Possible Restrictions

Measurements are typically performed in transmission mode. Front and back surfaces must be polished to optical-quality standards.