Measurement of Small Carrier Diffusion Coefficients

This service measures small carrier diffusion coefficients of 0.001–0.1 cm²/s in double-side polished semiconductor materials.

Capabilities:

• LITG with electronic probe delay
• decay measurements from 2 ns to 200 microseconds
• grating periods from 1 to 10 micrometres
• pump wavelengths of 263, 351, 527 and 1053 nm
• probe wavelength of 1064 nm
• Nd:YLF pump laser, 2 mJ, 10 ps
• 2 ns Nd:YAG probe laser.

Restrictions:

• diffusion coefficient measurement range of 0.001–0.1 cm²/s
• sample size up to 10 × 10 cm
• adjustable spatial resolution from 0.1 mm to 3 mm
• for smaller diffusion coefficients, carrier lifetimes should be longer.

Measurement of Slow Differential Absorption Decays

This service measures slow differential absorption decays in semiconductor layers.

Capabilities:

• pump-probe method with CW wavelength
• recombination decay determination at 1550 nm probe wavelength
• excitations at 263, 351, 527 and 1053 nm
• Nd:YLF pump laser, 2 mJ, 10 ps.

Restrictions:

• decay range from 200 ps to 10 ms
• sample size up to 10 × 10 cm
• sample size up to 3 × 3 cm for temperature measurements in the 80–800 K range
• adjustable spatial resolution from 0.05 mm to 3 mm.

Spatially Resolved Luminescence Measurement and Analysis