Technical Scope and Capabilities

This service provides contactless, non-destructive characterisation of ultrafast photoinduced processes in semiconductor materials and devices. It is suitable for investigation of

Transient absorption measures pump-induced changes in sample absorption after ultrafast laser excitation and reveals the time evolution of excited-state populations and charge-carrier dynamics.

• carrier dynamics
• excited-state absorption
• stimulated emission
• trapping
• relaxation
• charge-transfer processes.

Core Infrastructure / Tools / Equipment

The service uses

• PHAROS femtosecond KGW:Yb laser, 10 W, 10 kHz, 200 fs, 1030 nm
• two Orpheus optical parametric amplifiers, 210–2500 nm
• transient absorption setup
• excitation range 210–2500 nm
• single- and double-pulse excitation
• probe wavelength range 380–2500 nm
• temporal resolution 280 fs
• probe delay up to 12 ns
• sample temperature 10–800 K
• sample size from 1 × 1 mm to 100 × 100 mm
• maximum sample size of 25 × 25 mm for temperature measurements
• laser power and energy meters
• UV-VIS beam profiler
• ultrasonic bath for sample cleaning and preparation.

Target Audience and Possible Clients

The service is intended for

• academic and research institutions
• companies developing luminescent semiconductors and optical materials.

Service Delivery Terms and Times

The service is provided by responsible laboratory staff. Clients cannot perform measurements independently.

Possible Restrictions

Measurements are typically performed in transmission mode. Front and back surfaces must be polished to optical-quality standards.