Emitters:

• 253 GHz CMOS transistor-based THz oscillator with 12 mm diameter high-resistivity silicon lens and integrated log-spiral THz antenna-coupled nanometric field-effect transistor fabricated by 90 nm CMOS foundry technology
• 100, 200 and 600 GHz electronic multiplier chain-based emitter from Virginia Diodes, Inc.
• optically pumped continuous-wave molecular THz laser FIRL100 from Edinburgh Instruments at 0.76, 1.39, 2.52, 3.11 and 4.25 THz.

Detectors:

• single-pixel nanometric field-effect transistor-based THz detector with integrated patch antennae
• single-pixel polarisation-sensitive InGaAs-based bow-tie detector with broadband operation and almost flat response up to 0.8 THz
• single-pixel detector based on integrated log-spiral THz antenna-coupled nanometric field-effect transistor fabricated by 90 nm CMOS foundry technology.

Other components:

• translational three-axis stages
• various THz lenses
• know-how for development of terahertz-based monitoring or quality-control systems
• know-how in terahertz sensors and sources in commercially available CMOS technology
• design and characterisation of optical elements for advanced optical terahertz systems
• design and integration of THz detectors, sources, filters, lenses, splitters, polarisers and other elements into chips and hybrid systems, depending on the application scenario.

Material Compatibility

The service is applicable to

• plastics
• ceramics
• textiles
• composites
• foams
• other materials.

Operational Parameters

Imaging can be performed at:

• 83 GHz
• 100 GHz
• 200 GHz
• 253 GHz
• 600 GHz
• 700 GHz
• 1.39 THz
• 2.54 THz
• 3.11 THz
• 4.25 THz.

Resolution:

• px = 0.1–3 mm.

Photonic and MEMS System Development through Foundry Pathways