Molecular Beam Epitaxy Growth of Advanced III-V Semiconductor Heterostructures
Photonic Integrated Circuits
Technical Scope and Capabilities
This service provides atomic-level control of film growth under ultra-high-vacuum conditions. It is intended for production of complex heterostructures and quantum-scale architectures.
Core Infrastructure / Tools / Equipment
The service uses
- Veeco GENxplor R&D for high-quality III-V compounds with thickness accuracy error below 1.5%
- SVT-V-2 Compact MBE for materials research in III-V semiconductors, including arsenides and bismides.
Material Compatibility
The systems support
- In
- Ga
- Al
- As
- Sb
- Bi.
Doping Capabilities
The service supports
- n-type doping using Si and Te
- p-type doping using Be.
Substrate Support
Supported substrates include:
Substrate size is supported up to 3 inches in diameter.
- GaAs
- InP
- InAs
- GaSb
- Si.
Infrastructure
All processes are conducted within ISO 7 classified cleanroom laboratories.
Service Delivery Mode
The service is provided as prototyping support for small-scale manufacturing and transition of novel photonic designs from laboratory research to fabrication-ready status.
Service Delivery Terms and Times
A mandatory technology testing plan is developed for each client, explicitly defining the scope, timing and technical milestones of the prototyping run.
Possible Restrictions
The facility is optimised for small-batch prototyping and research. It is not intended for mass assembly or high-volume manufacturing.