Technical Scope and Capabilities

This service group provides several contactless and photoelectric methods for semiconductor defect and recombination characterisation.

The services include

• steady-state photo-ionisation spectroscopy for defects in semiconductor structures and devices
• investigation of recombination processes and evaluation of recombination parameters in novel electronic materials
• contactless pulsed spectroscopy of thermal and photo-ionisation processes for impurities and defects in semiconductors
• contactless investigation of in situ evolution of radiation defects
• contactless investigation of ultrafast phenomena in semiconductors and spectroscopy of defects.

Core Infrastructure / Tools / Equipment

The services use

• MDR4 monochromator with photometric light source, 0.5–2.35 eV
• SMU Keithley 2635B
• temperature range 80 K to 400 K
• home-made VUTEG-4 instrument for carrier recombination characteristics
• carrier lifetime scanner over 120120 mm² area, as stated in the source description
• scanner of carrier lifetime and depth distribution of defects with precision of 2 micrometres
• stabilised temperature range 4 °C to 30 °C
• continuous-wave IR illumination for suppression or separation of carrier trapping components
• home-made VUTEG-6 instrument
• home-made VUTEG-3 instrument
• compatibility with vacuum irradiation chamber
• hadron fluence range of 10^10 to 10^16 cm-2
• dosimetry of spallator neutrons
• optical stand for spectroscopy and ultrafast phenomena research
• Light Conversion Pharos laser, 10 W at 10 kHz, 200 fs, 1030 nm
• Orpheus optical parametric amplifier and differential frequency generator, 210 nm to 16 micrometres
• pulsed photoionisation spectroscopy
• optical pump-probe measurements
• Avantes AvaSpec-ULS2048XL-EVO StarLine spectrophotometer
• liquid nitrogen cryostat, 78 K to 800 K.

Service Delivery Terms and Times

Details regarding terms, limitations and related matters are discussed separately with interested parties.