Technical Scope and Capabilities

This service provides profiling of carrier drift current transients and measurement of

• carrier mobility
• gain
• charge collection efficiency
• timing characteristics in semiconductor devices.

Core Infrastructure / Tools / Equipment

The service uses

• Particulars large scanning TCT setup with ps lasers at 1064 nm and 532 nm
• signal amplifiers
• Lecroy 2.5 GHz oscilloscope
• carrier two-photon injector setup implemented using Light Conversion Pharos fs laser system equipped with Orpheus OPA-DFG from 210 nm to 16 micrometres
• operating temperature range from -40 °C to 60 °C
• home-made system with 2 GHz Lecroy oscilloscope
• PicoQuant 1060 nm laser
• Standa 1062 nm, 531 nm and 354 nm ps lasers
• Cividec signal amplifiers.

Service Delivery Terms and Times

Details regarding terms, limitations and related matters are discussed separately with interested parties.